TIC108E SILICON CONTROLLED RECTIFIERS

TIC108E SILICON CONTROLLED RECTIFIERS

SEMICONDUCTORS TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S SILICON CONTROLLED RECTIFIERS • • • • • • 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 1 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Val.

Features

ximum averaging time of 20 ms. http://www.DataSheet4U.net/ Symbol Ratings B C Unit M S N V V A A A A W W °C °C °C D E Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Repetitive peak reverse voltage 100 200 300 400 500 600 700 800 Continuous on-state current at (or below) 5 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature 3.2 (see Note3) Surge on-state current (see Note4) 20 Peak positive gate current (pulse width 0.2 ≤300 µs) Peak power dissipation (pulse width ≤300 1.3 µs) Average gate pow.