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TIP102 (TIP100 - TIP102) Silicon NPN Darlington Power Transistors

Document Datasheet DataSheet (152.30KB)

TIP102 (TIP100 - TIP102) Silicon NPN Darlington Power Transistors

SEMICONDUCTORS NPN TIP100-101-102 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP105-106-107 Complia.

Features

f - http://www.DataSheet4U.net/ SEMICONDUCTORS NPN TIP100-101-102 THERMAL CHARACTERISTICS Symbol RthJ-case RthJ-amb From junction-case From junction-ambient Ratings Value 1.56 62.5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO Ratings Collector Cutoff Current Test Condition(s) IE= 0,VCB = VCBOmax IE= 0, VCE = 1/2 VCEOmax http://www.DataSheet4U.net/ Min - Typ - Max 50 Unit µA ICEO Collector Cutoff Current IEBO Emitter Cutoff Current Collector-Emitter Breakdown Voltage (*) VEB= 5 V, IC= 0 VCEO IC= 30 mA, IB= 0 IC= 3 A, IB= 6 mA VCE(SAT).

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