BDX64 Datasheet

BDX64 Silicon PNP Darlington Power Transistor

·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDX65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAX.

Features

com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX64 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX64A BDX64B IC= -50mA ;IB=0 -80 -100 V BDX64C -120 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -3V -2.5 V VECF C-E Diode Forward Voltage IF= -5A -1.8 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 -0.2 mA ICBO Collecto.