BDV67 |
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| Part Number | BDV67 |
| Manufacturer | Comset Semiconductors |
| Description | BDV67-A-B-C-D NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching appl... |
| Features |
et/
Value
Unit
PT
Power Dissipation
@ Tmb = 25° C
200
W
TJ
Junction Temperature
150 °C -65 to +150
TS
Storage Temperature
THERMAL CHARACTERISTICS Symbol
RthJ-mb
Ratings
Thermal Resistance, Junction to Mounting Base
Value
0.625
Unit
°C / W
SWITCHING TIMES Symbol
ton toff
Ratings
turn-on time turn-off time
Test Condition(s)
IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA
Min
-
Typ
1 3.5
Max
-
Unit
µs
26/09/2012
COMSET SEMICONDUCTORS
2/5
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV67-A-B-C-D
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test C... |
| Datasheet |
 BDV67 Data Sheet
PDF 135.14KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
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Power Innovations Limited |
PNP Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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Comset Semiconductors |
Silicon PNP Darlington Power Transistor |
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NTE |
Silicon PNP Transistors |
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INCHANGE |
PNP Transistor |
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Power Innovations Limited |
PNP Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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Comset Semiconductors |
Silicon PNP Darlington Power Transistor |
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INCHANGE |
PNP Transistor |
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Motorola Inc |
PNP Transistor |
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ON Semiconductor |
PNP Transistor |
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Power Innovations Limited |
PNP Transistor |
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