BDV66C PNP Darlington Power Transistor

BDV66C PNP Darlington Power Transistor

BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Colle.

Features

atts TJ Junction Temperature 150 °C -65 to +150 TS Storage Temperature THERMAL CHARACTERISTICS Symbol Rthj-c www.DataSheet.net/ Ratings Thermal Resistance, Junction to Case Value 0.625 Unit °C / W SWITCHING TIMES Symbol ton toff Ratings turn-on time turn-off time Test Condition(s) Min IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA - Value Typ 1 3.5 Unit Max µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 % 26/09/2012 COMSET SEMICONDUCTORS 2/4 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDV66-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Con.