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TTA0002 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications • High collector voltage: VCEO = －160 V (min) • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. TTA0002 Unit: mm Absolute Maximum Ratings (Tc = 25°C) C.

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tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2009-01 1 2013-11-01 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency .

No.	Part #	Manufacture	Description
1	TTA0001	INCHANGE	PNP Transistor
2	TTA0001	Toshiba Semiconductor	Silicon PNP Transistor
3	TTA0002	INCHANGE	PNP Transistor
4	TTA003	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
5	TTA004	Toshiba	Silicon PNP Epitaxial Type Transistor
6	TTA004B	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
7	TTA005	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
8	TTA006B	Toshiba	Silicon PNP Transistors
9	TTA007	Toshiba Semiconductor	Silicon PNP Transistor
10	TTA008B	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
11	TTA009	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
12	TTA010	Toshiba	Silicon PNP Triple-Diffused Type Bipolar Transistors
13	TTA011	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
14	TTA012	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors
15	TTA013	Toshiba	Silicon PNP Epitaxial Type Bipolar Transistors

TTA0002 Silicon PNP Transistor

TTA0002 Silicon PNP Transistor

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