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TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications • High collector voltage: VCEO = －160 V (min.) • Complementary to TTC0001 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. TTA0001 Unit: mm Absolute Maximum Ratings (Tc = 25°C) .
e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2009-01 1 2013-11-01 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-e.
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PNP Transistor |
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Silicon PNP Epitaxial Type Bipolar Transistors |
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