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65N06 |
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| Part Number | 65N06 |
| Manufacturer | KIA |
| Description | These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize ... |
| Features |
65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V Low gate charge ( typical 48nC) Low Crss ( typical 32.5pF) Fast switching 100% avalanche tested Improved dv/dt capability 175º maximum junction temperature rating
www.DataSheet.net/
3. Pin configuration
Pin 1 2 3 4
Function Gate Drain Source Drain
1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
KIA
SEMICONDUCTORS
60V N-CHANNEL MOSFET
65N06
4. Absolute maximum ratings
Parameter Drain-source voltage Tc=25 ºC Drain current Tc=100 ºC Drain current pulsed (note 1) Gate-source voltage Single pulsed avalanche energy (note 2) Avalanche ... |
| Document |
 65N06 Data Sheet
PDF 486.02KB |
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