CGH40120F |
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| Part Number | CGH40120F |
| Manufacturer | CREE |
| Description | CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purp... |
| Features |
• Up to 2.5 GHz Operation • 20 dB Small Signal Gain at 1.0 GHz • 15 dB Small Signal Gain at 2.0 GHz • 120 W Typical PSAT • 70 % Efficiency at PSAT • 28 V Operation APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure www.DataSheet.net/ • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms il 2012 Rev 2.5 – Apr Subject to change without notice. www.cree.com/wireless 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain... |
| Document |
 CGH40120F Data Sheet
PDF 1.06MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Cree |
RF Power GaN HEMT |
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Wolfspeed |
RF Power GaN HEMT |
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MACOM |
RF Power GaN HEMT |
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Cree |
RF Power GaN HEMT |
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Wolfspeed |
RF Power GaN HEMT |
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Cree |
RF Power GaN HEMT |
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Wolfspeed |
RF Power GaN HEMT |
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Cree |
RF Power GaN HEMT |
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Wolfspeed |
RF Power GaN HEMT |
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MACOM |
RF Power GaN HEMT |
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