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BDT64B |
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| Part Number | BDT64B |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
BDT64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT64
-60
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT64A BDT64B
IC= -30mA ;IB=0
-80 -100
V
BDT64C
-120
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA
-2.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA
-3.0 V
VBE(on) Base-Emitter On Voltage
IC= -5A ; VCE= -4V
-2.5 V
VECF-1 C-E Diode Forward Voltage
IF= -5A
-2.0 V
VECF-2... |
| Document |
 BDT64B Data Sheet
PDF 201.92KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
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Comset Semiconductors |
Silicon Darlington Power Transistor |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
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Comset Semiconductors |
Silicon Darlington Power Transistor |
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INCHANGE |
Silicon PNP Darlington Power Transistor |
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Comset Semiconductors |
Silicon Darlington Power Transistor |
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INCHANGE |
Silicon PNP Darlington Power Transistor |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
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Comset Semiconductors |
Silicon Darlington Power Transistor |
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INCHANGE |
Silicon PNP Darlington Power Transistor |
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