BDT63A |
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| Part Number | BDT63A |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
BDT63/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT63
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT63A BDT63B
IC= 30mA ;IB=0
BDT63C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
VECF ICEO ICBO IEBO
C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current
IF= 3A
VCE=... |
| Datasheet |
 BDT63A Data Sheet
PDF 215.88KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
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Comset Semiconductors |
Silicon Darlington Power Transistor |
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Comset Semiconductors |
Silicon Darlington Power Transistor |
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INCHANGE |
NPN Transistor |
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Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
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Comset Semiconductors |
Silicon Darlington Power Transistor |
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INCHANGE |
NPN Transistor |
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|
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
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Comset Semiconductors |
Silicon Darlington Power Transistor |
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INCHANGE |
NPN Transistor |
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