BD683 SILICON DARLINGTON POWER TRANSISTORS

BD683 SILICON DARLINGTON POWER TRANSISTORS

NPN BD683 – BD683A SILICON DARLINGTON POWER TRANSISTORS The BD683 and BD683A are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD684 and BD684A. Compliance to RoHS ABSOLUTE MAXI.

Features

mbol ICBO ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF I(SB) Ratings Collector cut-off current Test Condition(s) Min 750 10 0,8 - Typ 60 1,5 0,8 4,5 Max 0,2 2 0,5 5 2,5 2,8 2,5 2 8 Unit mA mA mA V V kHz V A µs ton toff (*) Measured under pulse conditions :tP <300µs, δ <2%. IE=0, VCB= 120 V IE=0, VCB= 120V, Tj= 150°C Collector cut-off current IB=0,VCE= 1/2VCEOMAX Emitter cut-offcurrent IC=0, VEB=5 V Collector-Emitter saturation IC=1.5 A, IB=30 mA BD683 Voltage (*) IC=2 A, IB=40 mA BD683A VCE=3 V, IC=1.5 A BD683 DC Current Gain (*) VCE=3 V, IC=2 A BD683A VCE=3 V, IC=1.5 A BD683 Base-Emitter Vo.