SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN .
BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings From junction to mounting base From junction to ambient in free air Value 2 70 Unit K/W K/W 18/10/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | BD650 |
Bourns Electronic Solutions |
PNP SILICON POWER DARLINGTONS | |
2 | BD650 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | BD650 |
INCHANGE |
PNP Transistor | |
4 | BD650CS |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
5 | BD650CT |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
6 | BD650F |
INCHANGE |
PNP Transistor | |
7 | BD651 |
Bourns Electronic Solutions |
NPN SILICON POWER DARLINGTONS | |
8 | BD651 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | BD651 |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS | |
10 | BD651 |
INCHANGE |
NPN Transistor | |
11 | BD6510F |
Rohm |
High-Side Switch | |
12 | BD6512F |
Rohm |
High-Side Switch | |
13 | BD6513F |
Rohm |
High-Side Switch | |
14 | BD6516F |
Rohm |
High-Side Switch | |
15 | BD6517F |
Rohm |
High-Side Switch |