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BD650 Power Transistor

Document Datasheet DataSheet (163.74KB)

BD650 Power Transistor

SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN .

Features

BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings From junction to mounting base From junction to ambient in free air Value 2 70 Unit K/W K/W 18/10/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/.

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