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 DataSheet (129.67KB)
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2N6285 – 2N6286 – 2N6287 PNP DARLINGTON POWER SILICON TRANSISTOR The 2N6285, 2N6286 and 2N6287 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary NPN are 2N6282, 2N6283, 2N6284 Compliance to RoHS. ABS.
co.kr/
2N6285
– 2N6286
– 2N6287
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance Junction-Case
Value
1.09
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current
Test Condition(s)
2N6285 IC= -200 m A IB= 0 VCE= -30 V, IB= 0 VCE= -40 V, IB= 0 VCE= -50 V, IB= 0
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Min
-60 -80 -100 -
Typ
-
Max
-1
Unit
VCEO(SUS)
2N6286 2N6287
V
ICEO
IEBO
ICEX
Collector Cutoff Current
VCE(SAT)
Collector-Emitter saturation Voltage (*) Collector-Emitte.
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | 2N6280 |
ETC |
HIGH-POWER NPN SILICON TRANSISTORS |
|
| 2 | 2N6280 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 3 | 2N6280 |
New Jersey Semi-Conductor |
NPN POWER TRANSISTORS |
|
| 4 | 2N6280 |
SSDI |
NPN Transistor |
|
| 5 | 2N6281 |
ETC |
HIGH-POWER NPN SILICON TRANSISTORS |
|
| 6 | 2N6281 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 7 | 2N6281 |
New Jersey Semi-Conductor |
NPN POWER TRANSISTORS |
|
| 8 | 2N6281 |
SSDI |
NPN Transistor |
|
| 9 | 2N6282 |
ON Semiconductor |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 10 | 2N6282 |
INCHANGE |
NPN Transistor |
|
| 11 | 2N6282 |
Motorola |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 12 | 2N6282 |
Savantic |
Silicon NPN Power Transistors |
|
| 13 | 2N6282 |
Seme LAB |
Bipolar NPN Device |
|
| 14 | 2N6282 |
Comset Semiconductors |
(2N6282 - 2N6284) NPN Silicon Darlington Power Transistor |
|
| 15 | 2N6282 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|