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2N6283 |
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| Part Number | 2N6283 |
| Manufacturer | Comset Semiconductors |
| Description | 2N6282 – 2N6283 – 2N6284 NPN SILICON DARLINGTON POWER TRANSISTOR The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequen... |
| Features |
282 – 2N6283 – 2N6284 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance Junction-Case Value 1.09 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current Test Condition(s) 2N6282 IC= 200 m A IB= 0 VCE= 30 V, IB= 0 VCE= 40 V, IB= 0 VCE= 50 V, IB= 0 2N6283 2N6284 Min 60 80 100 - Typ - Max 1 Unit VCEO(SUS) V ICEO IEBO ICEX Collector Cutoff Current VCE(SAT) Collector-Emitter saturation Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter s... |
| Document |
 2N6283 Data Sheet
PDF 129.58KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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ETC |
HIGH-POWER NPN SILICON TRANSISTORS |
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INCHANGE |
Silicon NPN Power Transistor |
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New Jersey Semi-Conductor |
NPN POWER TRANSISTORS |
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SSDI |
NPN Transistor |
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ETC |
HIGH-POWER NPN SILICON TRANSISTORS |
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INCHANGE |
Silicon NPN Power Transistor |
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New Jersey Semi-Conductor |
NPN POWER TRANSISTORS |
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SSDI |
NPN Transistor |
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ON Semiconductor |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
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INCHANGE |
NPN Transistor |
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