2N6058 Datasheet

2N6058 POWER COMPLEMENTARY Silicon TRANSISTORS

NPN 2N6057 – 2N6058 – 2N6059 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6057, 2N6058 and 2N6059 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The co.

Features

t °C/W 17/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N6057
  – 2N6058
  – 2N6059 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE= VCEX =60 V, VBE=-1.5 V VCE= VCEX =80 V, VBE=-1.5 V VCE= VCEX =100 V VBE=-1.5 V VCE= VCEX =60 V, VBE=-1.5 V TC=150°C VCE= VCEX =80 V, VBE=-1.5 V TC=150°C VCE= VCEX =100 V VBE=-1.5 V, TC=150°C VCE=30 Vdc, IB=0 VCE=40 Vdc, IB=0 VCE=50 Vdc, IB=0 VEB=5 V www.DataSheet.net/ Min 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N605.