NPN 2N6057 – 2N6058 – 2N6059 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6057, 2N6058 and 2N6059 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The co.
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°C/W
17/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N6057
– 2N6058
– 2N6059
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE= VCEX =60 V, VBE=-1.5 V VCE= VCEX =80 V, VBE=-1.5 V VCE= VCEX =100 V VBE=-1.5 V VCE= VCEX =60 V, VBE=-1.5 V TC=150°C VCE= VCEX =80 V, VBE=-1.5 V TC=150°C VCE= VCEX =100 V VBE=-1.5 V, TC=150°C VCE=30 Vdc, IB=0 VCE=40 Vdc, IB=0 VCE=50 Vdc, IB=0 VEB=5 V
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Min
2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N605.
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