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2N4030
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2N4030 Silicon Planar Epitaxial PNP Transistor

Document Datasheet DataSheet (134.73KB)

2N4030 Silicon Planar Epitaxial PNP Transistor

PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Collector-Base .

Features


  – 2N4033 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE = 0, VCB = 50 V IE = 0, VCB = 60 V VCB =50 V IE = 0 ; V Tamb = 150°C VCB =60 V IE = 0, VCB = 50 V IE = 0, VCB = 60 V VCB =50 V IE = 0 Tamb = 150°C VCB =60 V 2N4030 2N4031 2N4030 2N4031 2N4032 2N4033 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 Min 60 80 60 80 60 80 60 80 5 - Typ - Max 50 50 50 50 0.15 0.5 1 0.9 1.1 1.2 Unit nA µA nA µA -ICBO Collector Cutoff Current -VCB0 Collector
  – Base -IC = 10 µA Breakdown Voltage IE = 0 V .

2N4030 2N4030 2N4030
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