Document | DataSheet (599.38KB) |
MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. 4.0 DIM in mm 1.0 FEATURES • • • • • • • • InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 35dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant P.
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• InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 35dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant Package
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APPLICATIONS
IEEE802.16-2004 IEEE802.16e-2005
GND
1
2
3
4
5
1 2 3 4 5 6 7 8 9 10
Pin Vc1, Vcb Vc2 Vc3 Vc4 Pout Vdet GND Vref Vcont
X-ray Top View
FUNCTIONAL BLOCK DIAGRAM
www.DataSheet.net/
Gain control Pin Vcont (0V/3.3V) Power Detector Vc1,Vcb (5V) Bias Circuit
Detector Circuit
Pout
Vdet
Vc2(5V) Vref(2.85V)
Vc3(5V) Vc4(5V)
Mitsubishi Elect.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | MGFS38E2325-01 |
Mitsubishi Electric Semiconductor |
2.3 - 2.5GHz HBT MMIC MODULE | |
2 | MGFS38E2527-01 |
Mitsubishi Electric Semiconductor |
2.5 - 2.7GHz HBT MMIC MODULE | |
3 | MGFS36E2325 |
Mitsubishi Electric Semiconductor |
2.3-2.5GHz HBT HYBRID IC | |
4 | MGFS36E2527 |
Mitsubishi Electric |
HBT HYBRID IC | |
5 | MGFS36E3436A |
Mitsubishi Electric Semiconductor |
3.4-3.6GHz HBT HYBRID IC | |
6 | MGFS1R5 |
COSEL |
DC-DC Converters | |
7 | MGFS45V2527A |
Mitsubishi Electric |
power GaAs FET | |
8 | MGFS52B2122 |
Mitsubishi Electric |
BAND 100W GsAs FET | |
9 | MGFS52BN2122A |
Mitsubishi Electric |
power GaAs FET | |
10 | MGF0904A |
Mitsubishi |
High-power GaAs FET | |
11 | MGF0905A |
Mitsubishi |
High-power GaAs FET | |
12 | MGF0906B |
Mitsubishi |
High-power GaAs FET | |
13 | MGF0907B |
Mitsubishi |
High-power GaAs FET | |
14 | MGF0909A |
Mitsubishi |
L /S BAND POWER GaAs FET | |
15 | MGF0910A |
Mitsubishi |
High-power GaAs FET |