Document | DataSheet (276.28KB) |
TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCC8009 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.) ( VGS = 10 V.
5,6,7,8:DRAIN 4:GATE JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Note: For Notes 1 to 3, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | TPCC8001-H |
Toshiba Semiconductor |
Field Effect Transistor | |
2 | TPCC8002-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | TPCC8003-H |
Toshiba Semiconductor |
Field Effect Transistor | |
4 | TPCC8005-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | TPCC8006-H |
Toshiba Semiconductor |
Field Effect Transistor |