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SSM3J327R |
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| Part Number | SSM3J327R |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J327R 1. Applications • Power Management Switches 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS... |
| Features |
(1) 1.5-V drive (2) Low drain-source on-resistance
: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Internal Circuit
SOT-23F
SSM3J327R
1: Gate 2: Source 3: Drain
©2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2009-12
2021-10-21 Rev.1.0
SSM3J327R
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-20
V
VGSS
±8
... |
| Document |
 SSM3J327R Data Sheet
PDF 428.80KB |
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