TT8U2 MOSFET

TT8U2 MOSFET

1.5V Drive Pch +SBD MOSFET TT8U2 Structure Silicon P-channel MOSFET / schottky barrier diode Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V). 4) Built in Low IR shottky barierr daiode. Application.

Features

1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V). 4) Built in Low IR shottky barierr daiode.
Applications Switching
Packaging specifications Type TT8U2
Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Channel temperature Power dissipation *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : U02
Inner circuit Taping .