TT8M1 MOSFET

TT8M1 MOSFET

1.5V Drive Nch + Pch MOSFET TT8M1  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive).  Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M01  Applic.

Features

1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive).
 Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M01
 Application Switching
 Packaging specifications Type TT8M1 Package Taping Code TR Basic ordering unit (pieces) 3000 
 Inner circuit
 Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS .