Document | DataSheet (36.20KB) |
Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 Unit: mm s Features q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0–0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, all.
q q q
4.5±0.1 1.6±0.2
1.5±0.1
1.0
–0.2
+0.1
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.6±0.1
0.4max.
45°
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.0
–0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Rati.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 2SB1530 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
2 | 2SB1530 |
INCHANGE |
PNP Transistor | |
3 | 2SB1530 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB1531 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
5 | 2SB1531 |
Matsushita Electric |
Transistors | |
6 | 2SB1537 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
7 | 2SB1537 |
Kexin |
Silicon PNP epitaxial planar type Transistor | |
8 | 2SB1539 |
Kexin |
Silicon PNP epitaxial planar type Transistor | |
9 | 2SB1502 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
10 | 2SB1502 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor | |
11 | 2SB1502 |
INCHANGE |
PNP Transistor | |
12 | 2SB1503 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
13 | 2SB1503 |
SavantIC |
SILICON POWER TRANSISTOR | |
14 | 2SB1503 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor | |
15 | 2SB1503 |
INCHANGE |
PNP Transistor |