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2SB1539
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2SB1539 Silicon PNP epitaxial planer type Transistor

Document Datasheet DataSheet (36.20KB)

2SB1539 Silicon PNP epitaxial planer type Transistor

Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 Unit: mm s Features q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0–0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, all.

Features

q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0
  –0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0
  –0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Rati.

2SB1539 2SB1539 2SB1539
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