2SB1417 Silicon PNP epitaxial planar type Transistor

2SB1417 Silicon PNP epitaxial planar type Transistor

Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm s Features q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80.

Features

q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings
  –60
  –80
  –60
  –80
  –6
  –5
  –3 15 2.0 150
  –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C) 5.0±0.1 10.0±0.2 1.0 90° 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 emitter voltage 2SB1417A Emitter to base voltage Peak collecto.