2SB1036 PNP Transistor

2SB1036 PNP Transistor

Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 4.0±0.2 s Features q q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector curren.

Features

q q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings
  –120
  –120
  –5
  –50
  –20 300 150
  –55 ~ +150 Unit V 1 2 3 1.27 1.27 V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.15 EIAJ:SC
  –72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base volta.