SSM9563GM P-channel Enhancement-mode Power MOSFET

SSM9563GM P-channel Enhancement-mode Power MOSFET

The SSM9563GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM9563GM is supplied in an RoHS-compliant SO-8 package, which is widely used for medi.

Features

hermal resistance, junction-ambient 3 Value 50 Units °C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board; 125°C/W when mounted on the minimum pad area required for soldering. 9/26/2006 Rev.3.01 www.SiliconStandard.com 1 of 5 SSM9563GM ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown voltage Breakdown voltage temperature coefficient (at Tj = 25°C, unless otherwise specified) Test Conditions VGS=0V, ID=-250uA Reference to .