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H55S1222EFP-75E |
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| Part Number | H55S1222EFP-75E |
| Manufacturer | Hynix Semiconductor |
| Description | and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Jun. 2008 1 www.DataSheet4U.com 1128Mbit (4M... |
| Features |
● Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) ● ● MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During burst Read or Write operation, a different bank is activated and burst Read or Write for that bank is performed - During auto precharge burst Read or Write, burst Read or Write for a different bank is performed ● Power Supply Voltage : VDD / VDDQ = 1.7V to 1.95V LVCMOS compatible I/O Interface Low Voltage ... |
| Document |
 H55S1222EFP-75E Data Sheet
PDF 1.12MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Hynix Semiconductor |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O |
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Hynix Semiconductor |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O |
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Hynix Semiconductor |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O |
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Hynix Semiconductor |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O |
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Hynix Semiconductor |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O |
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Hynix Semiconductor |
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O |
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Hynix Semiconductor |
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O |
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Hynix Semiconductor |
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O |
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Hynix Semiconductor |
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O |
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Hynix Semiconductor |
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O |
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