V40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V40100C, VI40100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V40100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI40100C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky .

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 20 A 100 V 250 A VF at IF = 20 A 0.61 V TJ max. Package 150 °C TO-220AB, TO-262AA Diode variatio.