The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding. The bias and matching ci.
• Small size by using simple matching circuit board
• Single Supply Voltage
• Heat sink 99.9% copper, gold plated
• High Productivity
• Low Manufacturing Cost
• GaAs HFET
RFW0947-10
Application
• GSM Repeater
• RF Sub-Systems
• Base Station
www.DataSheet4U.com
Package : DP-56
Description
The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding. The bias and matching circuit a.
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2A/ 60V/ 0.160 Ohm/ Logic Level/ N-Channel Power MOSFET |