M36L0T7050T2 Datasheet

M36L0T7050T2 (M36L0T7050T2 / M36L0T7050B2) 128 Mbit Flash memory and 32 Mbit PSRAM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.21 Address Inputs (.

Features

Synchronous / Asynchronous Read
  – Synchronous Burst Read mode: 52MHz
  – Random Access: 85ns Synchronous Burst Read Suspend Programming time
  – 2.5µs typical Word program time using Buffer Enhanced Factory Program command Memory organization
  – Multiple Bank Memory Array: 8 Mbit Banks
  – Parameter Blocks (Top or Bottom location) Dual operations
  – program/erase in one Bank while read in others
  – No delay between read and write operations
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■ PSRAM
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■ Access time: 65ns 8-Word Page Access capability: 18ns Low standby current: 100µA Deep power down current: 10µA Compatible with standar.