K6F8016U6D 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6D 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F8016U6D families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operatio.

Features

• Process Technology: Full CMOS
• Organization: 512K x16
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-FBGA-6.00x7.00 CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F8016U6D families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 512K x 16 bit Super Low Pow.