K1S3216BCD 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S3216BCD 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

The K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low stan.

Features

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• UtRAM GENERAL DESCRIPTION The K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 1.7~2.0V Three State Outputs Compatible with Low Power SRAM
• Support 4 page read mode
• Package Type: 48-FBGA-6.00x8.00 PRODUCT FAMILY Product Family Operating Temp. Vcc Range.