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K4T51043QB-ZCD5 |
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| Part Number | K4T51043QB-ZCD5 |
| Manufacturer | Samsung semiconductor |
| Description | 2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 28 Rev. 1.5 July 2005 512Mb B-die DDR2 SDRAM 0. Ordering Information Organization 128Mx4 64Mx8... |
| Features |
Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
• JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Read Latency(RL) -1 • Burst Length: 4 , 8(Interleave/nibble sequential) • Programmable Sequential / Interleave Burst Mode • Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature) • Off-Chip... |
| Document |
 K4T51043QB-ZCD5 Data Sheet
PDF 633.79KB |
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