GS815018AB-357 |
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Part Number | GS815018AB-357 |
Manufacturer | GSI Technology |
Description | 250 MHz–357 MHz 2.5 V VDD HSTL I/O Because GS815018/36A are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles ar... |
Features |
• Register-Register Late Write mode, Pipelined Read mode • 2.5 V +200/ –200 mV core power supply • 1.5 V or 1.8 V HSTL Interface • ZQ controlled programmable output drivers • Dual Cycle Deselect • Fully coherent read and write pipelines • Byte write operation (9-bit bytes) • Differential HSTL clock inputs, K and K • Asynchronous output enable • Sleep mode via ZZ • IEEE 1149.1 JTAG-compliant Serial Boundary Scan • JEDEC-standard 119-bump BGA package • Pb-Free 119-bump BGA package available 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM Functional Description 250 MHz –357 MHz 2.5 V VD... |
Datasheet |
GS815018AB-357 Data Sheet
PDF 1.29MB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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GSI Technology |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
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GSI Technology |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
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GSI Technology |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
|
|
|
GSI Technology |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
|
|
|
GSI Technology |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
|
|
|
GSI Technology |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
|
|
|
GSI Technology |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
|
|
|
GSI Technology |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
|
|
|
GSI Technology |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
|
|
|
GSI Technology |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
|