K4S64163LH-RG |
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| Part Number | K4S64163LH-RG |
| Manufacturer | Samsung semiconductor |
| Description | The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design all... |
| Features |
• 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (4K cycle). Commercia... |
| Datasheet |
 K4S64163LH-RG Data Sheet
PDF 141.86KB |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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