HYE18L512320BF-7.5 DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM

HYE18L512320BF-7.5 DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM

133 MHz 4 Banks × 4 Mbit × 32 LP-SDRAM 133 MHz 4 Banks × 4 Mbit × 32 LP-SDRAM Standard Temperature Range HYB18L512320BF-7.5 HYE18L512320BF-7.5 Extended Temperature Range 1) HY[B/E]: Designator for memory products (HYB: Standard temp range, HYE: extended temp. range) 18L: 1.8 V Mobile-RAM 512: 512 M.

Features

4 banks × 4 Mbit × 32 organization (dual-die) Fully synchronous to positive clock edge Four internal banks for concurrent operation Programmable CAS latency: 2, 3 Programmable burst length: 1, 2, 4, 8 or full page Programmable wrap sequence: sequential or interleaved Programmable drive strength: full, 1/2, 1/4 and 1/8 Auto refresh and self refresh modes Refresh cycles:
  – 8192 refresh cycles / 64 ms Auto precharge Commercial (-0°C to +70°C) and Extended (-25°C to +85°C) operating temperature range Package:
  – Dual-Die 90-ball PG-TFBGA package (13.0 × 8.0 × 1.2 mm) RoHS Compliant Products1) Pow.