KFG5616U1M-DIB |
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| Part Number | KFG5616U1M-DIB |
| Manufacturer | Samsung semiconductor |
| Description | is revised. 3. Changed Read while Load and Write While Program diagram. 4. Revised OTP Flow Chart 5. Added Multi Block Erase operation cases 6. Added Spare Assignment information 7. Added NAND Array M... |
| Features |
• Design Technology: 0.12µm • Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM • NAND Array - Page Size : (1K+32)bytes - Block Size : (64K+2K)bytes FLASH MEMORY www.DataSheet4U.com ♦ Architecture ♦ Performance • Host Interface type - Synchronous Burst Read : Clock Frequency: up to 54MHz : Linear Burst - 4 , 8 , 16 , 32 words with wrap-around : Continuous Sequential Burst(512 words) - Asynchronous Random Read... |
| Datasheet |
 KFG5616U1M-DIB Data Sheet
PDF 1.29MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Samsung semiconductor |
OneNAND Specification FLASH MEMORY |
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Samsung semiconductor |
OneNAND Specification FLASH MEMORY |
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Samsung semiconductor |
OneNAND Specification FLASH MEMORY |
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Samsung semiconductor |
OneNAND Specification FLASH MEMORY |
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Samsung semiconductor |
OneNAND256 FLASH MEMORY |
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Samsung semiconductor |
OneNAND Specification FLASH MEMORY |
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Samsung semiconductor |
OneNAND Specification FLASH MEMORY |
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Samsung semiconductor |
OneNAND256 FLASH MEMORY |
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Samsung semiconductor |
OneNAND Specification FLASH MEMORY |
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Samsung semiconductor |
FLASH MEMORY |
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