HAT2202C |
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Part Number | HAT2202C |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | HAT2202C Silicon N Channel MOS FET Power Switching www.DataSheet4U.com REJ03G1236-0600 Rev.6.00 Oct 01, 2009 Features • Low on-resistance RDS(on) = 31 mΩ typ. (at VGS = 4.5 V) • Low drive current. ... |
Features |
• Low on-resistance RDS(on) = 31 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤... |
Document |
HAT2202C Data Sheet
PDF 226.76KB |
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No. | Part # | Manufacture | Description | Datasheet |
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Renesas Technology |
Silicon N-Channel Power MOSFET |
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Silicon N-Channel Power MOSFET |
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Renesas Technology |
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Renesas Technology |
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Renesas Technology |
Silicon N-Channel Power MOSFET |
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Renesas Technology |
Silicon N-Channel Power MOSFET |
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Renesas Technology |
Silicon N-Channel Power MOSFET |
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Renesas Technology |
Silicon N-Channel Power MOSFET |
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Renesas Technology |
Silicon N-Channel Power MOSFET |
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Renesas Technology |
Silicon N-Channel Power MOSFET |
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