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K4S513233F-MEF |
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| Part Number | K4S513233F-MEF |
| Manufacturer | Samsung semiconductor |
| Description | The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design al... |
| Features |
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Commer... |
| Document |
 K4S513233F-MEF Data Sheet
PDF 172.18KB |
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Samsung semiconductor |
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Samsung semiconductor |
4M x 32Bit x 4 Banks Mobile SDRAM |
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Samsung semiconductor |
4M x 32Bit x 4 Banks Mobile SDRAM |
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Samsung semiconductor |
4M x 32Bit x 4 Banks Mobile SDRAM |
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