HYB39S16160CT-7 |
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| Part Number | HYB39S16160CT-7 |
| Manufacturer | Siemens Semiconductor |
| Description | LVTTL-version: HYB 39S16160CT-6 HYB 39S16160CT-7 P-TSOPII-50 (400mil) P-TSOPII-50 (400mil) 166MHz 2B x 512k x 16 SDRAM 143MHz 2B x 512k x 16 SDRAM Pin Description and Pinouts: CLK CKE CS RAS CAS WE ... |
| Features |
ogrammable Burst Length: 1, 2, 4, 8
• • • • • • The HYB39S16160CT-6/-7 are high speed dual bank Synchronous DRAM’s based on SIEMENS 0.25µm process and organized as 2 banks x 512kbit x 16. These synchronous devices achieve high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with SIEMENS’ advanced 16MBit DRAM process technology. The device is designed to comply with all JEDEC standards set for synchronous DRAM products, both electrically and mechanically. All ... |
| Document |
 HYB39S16160CT-7 Data Sheet
PDF 173.11KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Siemens Semiconductor |
16 MBit Synchronous DRAM |
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Siemens Semiconductor |
1M x 16 MBit Synchronous DRAM |
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Siemens Semiconductor |
16 MBit Synchronous DRAM |
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Siemens Semiconductor |
16 MBit Synchronous DRAM |
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Siemens Semiconductor |
16 MBit Synchronous DRAM |
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Siemens Semiconductor |
Special Mode Registers Two color registers Burst Read |
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Siemens Semiconductor |
Special Mode Registers Two color registers Burst Read |
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Siemens Semiconductor |
Special Mode Registers Two color registers Burst Read |
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Siemens Semiconductor |
16 MBit Synchronous DRAM |
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Siemens Semiconductor |
16 MBit Synchronous DRAM |
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