K4S56323LF-FHL |
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| Part Number | K4S56323LF-FHL |
| Manufacturer | Samsung semiconductor |
| Description | The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design al... |
| Features |
• VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (4K cycle). Commerc... |
| Datasheet |
 K4S56323LF-FHL Data Sheet
PDF 170.16KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
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Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
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Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
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Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
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Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
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Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
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Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
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Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
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Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
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Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
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