APT100GT120JR |
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Part Number | APT100GT120JR |
Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
Description | www.DataSheet4U.com APT100GT120JR 1200V, 100A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the ... |
Features |
• Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Conti... |
Datasheet |
APT100GT120JR Data Sheet
PDF 214.07KB |
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