Search by part number and manufacturer or description
K4S643233F-SI |
|
Click to view a larger image
| Part Number | K4S643233F-SI |
| Manufacturer | Samsung semiconductor |
| Description | The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allow... |
| Features |
• • • • 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature operation (-25°C to 85 °C). Industrial temperature operation ( -40° C to 85° C). 90balls FBGA(-SXXX -Pb, -DXXX -Pb Free). CMOS SDRAM GENERAL DESCRIPTIO... |
| Document |
 K4S643233F-SI Data Sheet
PDF 90.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Samsung semiconductor |
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
|
|
|
|
Samsung semiconductor |
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
|
|
|
|
Samsung semiconductor |
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
|
|
|
|
Samsung semiconductor |
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
|
|
|
|
Samsung semiconductor |
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
|
|
|
|
Samsung semiconductor |
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
|
|
|
|
Samsung semiconductor |
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
|
|
|
|
Samsung semiconductor |
Mobile-SDRAM |
|
|
|
|
Samsung semiconductor |
Mobile-SDRAM |
|
|
|
|
Samsung semiconductor |
Mobile-SDRAM |
|