N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9214-75B in SOT428 (D-PAK) 1.2 Features s TrenchMOSTM technology s 175 °C rated s Q101.
s TrenchMOSTM technology s 175 °C rated s Q101 compliant s Logic level compatible 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching 1.4 Quick reference data s EDS(AL)S ≤ 131 mJ s ID ≤ 71 A s RDSon = 11.9 mΩ (typ) s Ptot ≤ 150 W 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline [1] mb Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possib.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
|
|
NXP |
N-Channel MOSFET |
|
|
|
NXP Semiconductors |
TrenchMOS logic level FET |
|
|
|
NXP Semiconductors |
TrenchMOS logic level FET |
|
|
|
NXP Semiconductors |
TrenchMOS logic level FET |
|
|
|
NXP Semiconductors |
TrenchMOS logic level FET |
|
|
|
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
|
|
NXP |
N-Channel MOSFET |
|
|
|
NXP Semiconductors |
N-Channel MOSFET |
|
|
|
NXP Semiconductors |
TrenchMOS logic level FET |
|
|
|
NXP Semiconductors |
N-Channel MOSFET |
|
|
|
NXP |
N-channel TrenchMOS logic level FET |
|
|
|
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
|
|
NXP |
TrenchMOS logic level FET |
|
|
|
NXP Semiconductors |
TrenchMOS FET |
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|