MD7IC21100GNR1 RF LDMOS Wideband Integrated Power Amplifiers

MD7IC21100GNR1 RF LDMOS Wideband Integrated Power Amplifiers

10 μF, 50 V Chip Capacitors 5.1 pF Chip Capacitors 10 pF Chip Capacitor 1.2 pF Chip Capacitors 0.5 pF Chip Capacitor 0.1 μF, 100 V Chip Capacitors 1 μF, 100 V Chip Capacitors 4.7 KΩ, 1/4 W Chip Resistors 2 Ω,1/2 W Chip Resistors Part Number GRM55DR61H106KA88B ATC100B5R1CT500XT ATC100B100JT500XT ATC1.

Features

• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S-Parameters
• On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)
• Internally Matched for Ease of Use
• Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 2110 - 2170 MHz, 32 W Avg., 28 V SINGLE W - CDMA RF L.