STM4800A Datasheet

STM4800A N-Channel E nhancement Mode Field Effect Transistor

S T M4800A S amHop Microelectronics C orp. Dec 30 2004 ver1.1 www.DataSheet4U.com N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) Max ID 8.2A R DS (ON) S uper high dense cell design for low R DS (ON ). 18.5 @ V G S = 10V 33 @ V G S =.

Features

S (ON) ID(ON) gFS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 7A V DS = 10V, V GS = 10V V DS = 10V, ID = 8A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.6 29 20 10 750 185 85 3 33 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 16.5 18.5 A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Out.