BTD1816I3 Datasheet

BTD1816I3 NPN Transistor

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1816I3 BVCEO IC Spec. No. : C821I3 Issued Date : 2005.10.05 Revised Date :2017.05.12 Page No. : 1/6 100V 4A Features • Low collector-to-emitter saturation voltage • High-speed switching • Large current capability • Good line.

Features

• Low collector-to-emitter saturation voltage
• High-speed switching
• Large current capability
• Good linearity of hFE
• High fT
• RoHS compliant package Applications
• Suitable for relay drivers, high speed inverters, converters, and other high current switching applications. Symbol BTD1816I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Ordering Information Device BTD1816I3-0-UA-G Package TO-251 (Pb-free lead plating and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compoun.