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BTB1182J3 |
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| Part Number | BTB1182J3 |
| Manufacturer | Cystech Electonics Corp |
| Description | CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 BTB1182J3 Features • Low VCE(sat), ... |
| Features |
• Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1758J3 Symbol BTB1182J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Single Pulse , Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -40 -30 -5 -2 -5 (Note) 10 150 -55~+150 Unit V V V A A W °C °C BTB1182J3 CYS... |
| Document |
 BTB1182J3 Data Sheet
PDF 160.09KB |
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Cystech Electonics Corp |
PNP Transistor |
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CYStech |
PNP Transistor |
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CYStech |
PNP Transistor |
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Cystech Electonics Corp |
PNP Transistor |
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CYStech |
PNP Transistor |
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CYStech |
PNP Transistor |
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Cystech Electonics Corp |
PNP Transistor |
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Cystech Electonics Corp |
PNP Transistor |
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CYStech |
PNP Transistor |
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CYStech |
PNP Transistor |
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