The SSF3344 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. G D GENERAL FEATURES ● VDS = 30V,ID = 4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 70mΩ @ VGS=4.5V RDS(ON) < 55mΩ @ VGS=10V ● High Power and current handing capabil.
● VDS = 30V,ID = 4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 70mΩ @ VGS=4.5V RDS(ON) < 55mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
S
Schematic diagram
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking 3344 Device SSF3344 Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol
Drain-Source Voltage Gate-Source Voltage Drain .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | SSF3341 |
Silikron Semiconductor |
MOSFET | |
2 | SSF3341 |
GOOD-ARK |
P-Channel MOSFET | |
3 | SSF3341L |
Silikron Semiconductor |
MOSFET | |
4 | SSF3341L |
GOOD-ARK |
P-Channel MOSFET | |
5 | SSF3341UP |
Silikron |
MOSFET | |
6 | SSF3314E |
Silikron Semiconductor |
MOSFET | |
7 | SSF3314E |
GOOD-ARK |
N-Channel MOSFET | |
8 | SSF3322 |
Silikron Semiconductor |
MOSFET | |
9 | SSF3324 |
Silikron Semiconductor Co |
MOSFET | |
10 | SSF3324 |
GOOD-ARK |
N-Channel MOSFET | |
11 | SSF3338 |
Silikron Semiconductor Co |
MOSFET | |
12 | SSF3338 |
GOOD-ARK |
N-Channel MOSFET | |
13 | SSF3339 |
Silikron Semiconductor |
MOSFET | |
14 | SSF3339 |
GOOD-ARK |
P-Channel MOSFET | |
15 | SSF3365 |
Silikron Semiconductor |
MOSFET |