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K4S641632H-UC70 |
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| Part Number | K4S641632H-UC70 |
| Manufacturer | Samsung semiconductor |
| Description | The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (4K cycle) • Pb-free Package • RoHS compliant GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dyn... |
| Document |
 K4S641632H-UC70 Data Sheet
PDF 146.34KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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